Initial Publication Date: May 20, 2021
Secondary Ion Mass Spectrometer at Arizona State University
Arizona State University
http://sims.asu.edu
Contact Information
Richard Hervig
480-727-7282
sims@asu.edu
Tempe
AZ
Instrument Type
View of the 6f SIMS and controlling computer
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Cameca Instruments (Ametek) ims 6f
Dynamic SIMS instruments use an energetic (5-15 keV) primary beam of ions (O, Ar, Cs are most common). When the primary beam is directed at a sample, the collisions result in the ejection of atoms. Some of the "sputtered" atoms are ionized in the process and this secondary beam is accelerated into a mass spectrometer (magnetic sector or quadrupole) for analysis. The instruments are commercially available largely because of their critical role in quality control/quality assurance in semiconductor fabrication plants, where a tool that can determine changes in chemistry with depth is essential. Small-geometry SIMS as described here are used by geochemists in the fields described below. Some "large geometry" dynamic SIMS instruments are used in government agencies for nuclear forensics (treaty verification and nuclear non-proliferation) and by researchers interested in U-Pb dating and several applications in microanalyses for stable isotopes.
- SIMS, Secondary ion mass spectroscopy, or Dynamic SIMS
Application:
Applications include:
- Identification of phases
- Composition (elemental) of phases
- Elemental mapping, compositional zoning
- Trace element analysis
- Surface chemistry (sorption, catalysis)
- Depth profiling (chemical stratigraphy, nanometer scale)
Typical Use:
This small-geometry SIMS can quantitatively analyze small spots (a few to 40 µm diameter) for elements from hydrogen to uranium, with detection levels ranging from ~ng/g to µg/g, depending on the element. Microanalyses for isotope ratios can be obtained on several elements. Changes in chemistry on the scale of tens of nanometers can be determined in depth profiling mode. Most popular applications are microanalyses for H and other volatile elements (including D/H measurements), examination of intracrystal chemical zoning, and depth profiling thin films (e.g., semiconductors and retrieving diffusion coefficients).
Conditions for Use:
- Submitted samples will be analyzed on a contract basis (i.e. lab personnel will do the work)
- Visitors are invited to work in the lab to work with lab personnel
- Visitors are invited to work in the lab to design and do the work yourself
User Fees:
Ideal sample for measuring trace hydrogen. Polished samples are pressed into indium. Total sample diameter is 1".
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Contact lab for current rate (sims@asu.edu)
Instrument Priorities:
First priority: support NSF EAR-funded research
Remote Use:
Remote operation is in tandem with a lab representative at the instrument controls sharing screens using a selected software package.
Sample Preparation:
Samples must be ≤1" diameter rounds polished flat. More information on sample requirements can be found at http://sims.asu.edu
Standard Collections/Lab Blanks:
Software:
One-inch diameter Al disk with 8 holes containing grain fragments (unknowns, standards) embedded in epoxy and polished and coated with Au. Ready for analysis!
Reuse: This item is offered under a Creative Commons Attribution-NonCommercial-ShareAlike license http://creativecommons.org/licenses/by-nc-sa/3.0/ You may reuse this item for non-commercial purposes as long as you provide attribution and offer any derivative works under a similar license.
Data are provided as Excel worksheets.
Educational Use:
- Class demonstrations are available for undergraduates
- Graduate student research projects are invited
Support provided by:
The Arizona State University Community SIMS Facility is supported by a grant from the US National Science Foundation (EAR-1819550).